Radiation Effects on 1 Mb HfO2-based Resistive Memory

机译：辐射对基于1 Mb HfO 2 的电阻记忆的影响

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TID and SEE effects on 1 Mb HfO₂-based RRAM with 1T1R structure are investigated. TID-induced leakage current causes `0-1' type error bits. SELs in peripheral circuits occur, but no SEUs in memory array have been observed.

机译：TID和SEE对1 Mb HfO的影响 _{2
研究了具有1T1R结构的基于RRAM的RRAM。 TID引起的泄漏电流导致“ 0-1”型错误位。发生了外围电路中的SEL，但是没有观察到存储器阵列中的SEU。}

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《European Conference on Radiation and Its Effects on Components and Systems》|2017年|1-5|共5页
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Jinshun Bi; Feng Zhang; Li Chen; Yuan Duan; Kai Xi; Bo Li; Ming Liu;
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Radiation effects; Computer architecture; Hafnium compounds; Microprocessors; Transistors; Lasers; Leakage currents;

机译：辐射效应;计算机体系结构; H化合物;微处理器;晶体管;激光;漏电流;

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1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008,第004期
2. On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime [J] . Goux L., Raghavan N., Fantini A., Journal of Applied Physics . 2014,第13期

机译：在软击穿状态下基于Al 2 O 3 -和HfO 2 的存储单元的双极阻性开关特性
3. Effects of ZrO2 doping on HfO2 resistive switching memory characteristics [J] . Ryu Seung Wook, Cho Seongjae, Park Joonsuk, Applied Physics Letters . 2014,第7期

机译：ZrO 2 掺杂对HfO 2 电阻开关记忆特性的影响
4. Resistive switching characteristics and mechanism of bilayer HfO 2/ZrO 2 structure deposited by radio-frequency sputtering for nonvolatile memory [J] . Muhammad Ismail, Zahida Batool, Khalid Mahmood, Results in Physics . 2020,第60期

机译：双层HFO / ZRO 2 由射频沉积的结构溅射非易失性记忆
5. Radiation Effects on 1 Mb HfO2-based Resistive Memory [C] . Jinshun Bi, Feng Zhang, Li Chen, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：辐射效应1 MB HFO 2 基于电阻存储器
6. The Effects of Proton Radiation on HfO2-Based RRAM [D] . Xue, Panpan 2018

机译：质子辐射对基于HfO2的RRAM的影响
7. Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance [O] . D. J. McCrory, P. M. Lenahan, D. M. Nminibapiel, -1

机译：通过电检测磁共振研究TiN / Ti / HfO2 / TiN电阻性随机存取存储器的总电离剂量效应
8. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide [O] . El-Atab, N., Turgut, B.B., Okyay, A., K., 2015

机译：四层石墨烯纳米片与具有不对称Al 2 O 3 / HfO 2 隧道的2.85-nm Si纳米颗粒相比，增强了非易失性存储特性氧化物

Radiation Effects on 1 Mb HfO2-based Resistive Memory

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