Simulation the electron transport characteristic of GaN photocathode

摘要

In this paper the electron transport characteristic of GaN photocathode is simulated. After the electrons got across the band bind region and reached to the cathode surface, the distributing of electron energy is 2.3~3.4 eV. And the surface electron escapes probability of GaN photocathode with different energy is changing with the structure of surface barrier. The barrier I is more impotent that affecting the surface electron escapes probability than that of barrier II, its structure is determined the electron transport characteristic. And in the vacuum, the electron energy that corresponding to the peak electrons number is 2.95 eV..