1310 nm V-cavity semiconductor laser with 38×100GHz tuning range

摘要

A 1310 nm InGaAlAs/InP V-cavity laser (VCL) is proposed and experimentally demonstrated. The laser is ultra-compact with a device size of only 520μm×300μm. Measurement result shows that 38×100GHz tuning range with above 30dB side-mode suppression ratio (SMSR) is achieved.