首页> 外文会议>IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems >Thermal analysis of white light-emitting diodes structures with hybrid quantum dots/phosphor layer
【24h】

Thermal analysis of white light-emitting diodes structures with hybrid quantum dots/phosphor layer

机译:具有混合量子点/磷光体层的白色发光二极管结构的热分析

获取原文

摘要

This study quantitatively analyzed the optical and thermal performances of remote quantum dots (QDs)-based white light-emitting diodes (QDs-WLEDs) with the same spectra power distribution (SPD) but reverse packaging structures. The output optical power and PL spectra were measured and analyzed by an integrating sphere system, and the temperature fields were simulated by combing optical measurement with thermal simulation, finally the temperature fields were validated by infrared thermal imager. It was found that when achieved identical SPD, the QDs-on-phosphor type achieved LE of 112.2 lm/W, while the phosphor-on-QDs type demonstrated lower LE of 101.4 lm/W. Moreover, the QDs-on-phosphor type generated less heat than that of another, consequently the highest temperature in the QDs-on-phosphor type was lower than another, and the temperature difference can reach 11.2°C at driving current of 160 mA. Therefore, the QDs-on-phosphor type is an optimal packaging architecture for higher optical efficiency and lower device temperature.
机译:这项研究定量分析了具有相同光谱功率分布(SPD)但封装结构相反的基于远程量子点(QDs)的白光发光二极管(QDs-WLEDs)的光学和热性能。利用积分球系统对输出光功率和PL光谱进行了测量和分析,将光学测量与热模拟相结合,对温度场进行了模拟,最后利用红外热像仪对温度场进行了验证。发现当获得相同的SPD时,荧光粉QDs类型的LE达到112.2 lm / W,而荧光粉QDs类型的LE降低了101.4 lm / W。此外,QDs-on-磷光体类型产生的热量比另一种少,因此,Qds-on-磷光体类型的最高温度比另一种低,并且在160mA的驱动电流下温度差可以达到11.2℃。因此,QDs-on-phosphor类型是实现更高光学效率和更低器件温度的最佳封装架构。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号