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Hot spot removal in power electronics by means of direct liquid jet cooling

机译:通过直接液体喷射冷却去除电力电子设备中的热点

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This study examines the potential performance of submerged single phase direct impinging jet cooling and compares this cooling concept to a state of the art pin fin cooling systems. Submerged single impinging jets and arrays of impinging jets are characterized by high heat transfer coefficients. Especially in the stagnation region, in which the jet provides fresh cooling liquid to the surface, high heat removal rates occur. Thus, impinging jet arrays are a promising approach for hot spot removal as well as for thermal uniformity in large areas. In the present cooling concept, micro jets of approximately 1 mm diameter directly impinge onto the backside of a IGBT-semiconductor. In contrast to pin fin cooling, direct jet impingement cooling dispenses with the need for any kind of thermal interface materials (TIM) or heat spreader, and thus, minimizes the thermal resistance of the heat sink. A further advantage of submerged direct impinging jet cooling is hot spot removal. Once the exact location of heat generation is determined a small impinging jet can be directed at these hot spots. For this, local heat generation of the IGBT-semiconductor is first investigated by measuring the surface temperature on the top and bottom side by IR-thermometry. To observe the local heat generation the IGBT is operated for a very short time without any heat sink. This information is used in the development and design of the cooling chamber and the jet positioning. Finally, the cooling system is analyzed and compared to other common cooling systems. Both liquid cooling concepts are experimentally investigated with respect to heat transfer, pressure drop, and pumping power. A comparison and evaluation is provided with a special focus on applications in the automotive and electro-mobility sector.
机译:这项研究检查了浸没式单相直接冲击射流冷却的潜在性能,并将这种冷却概念与最先进的针翅冷却系统进行了比较。浸没的单次冲击射流和冲击射流阵列的特点是传热系数高。特别是在停滞区域中,在该停滞区域中,射流向表面提供新鲜的冷却液体,发生高的除热率。因此,撞击式射流阵列是一种用于去除热点以及大面积热均匀性的有前途的方法。在当前的冷却概念中,直径约1 mm的微型喷嘴直接撞击到IGBT半导体的背面。与针翅冷却相比,直接喷射冲击冷却省去了对任何种类的热界面材料(TIM)或散热器的需要,因此使散热器的热阻最小。浸没式直接冲击射流冷却的另一个优点是去除了热点。一旦确定了发热的确切位置,便可以将一个小的撞击射流对准这些热点。为此,首先通过红外测温法测量顶侧和底侧的表面温度来研究IGBT半导体的局部发热。为了观察局部发热,IGBT在很短的时间内运行而没有任何散热片。该信息用于冷却室的开发和设计以及喷嘴的位置。最后,分析冷却系统并将其与其他常见的冷却系统进行比较。对两种液体冷却概念均进行了传热,压降和泵送功率方面的实验研究。比较和评估特别针对汽车和电动汽车领域的应用。

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