Determination's principles of critical concentration of mobile charges in the oxide and geometrical configuration of heterogeneous surface transfer transistor gate matrix of photodetector

摘要

Critical values of mobile charge in intergate thermal oxide of the transfer transistor of photodetector's matrix and parameters of heterogeneous of polysilicon gate are calculated as part of ionic relaxation model of transport of alkali metals' mobile charges Na and K. The model takes into the account the influence of the mobile charges' the electric field of electrets on heterogeneity on the surface of the oxidized polysilicon gate.