Sidewall doping mechanism and doping profile tuning on 3D structure by plasma doping

摘要

In this paper the primary mechanisms for the plasma doping (PLAD) of 3D structures - direct implant, scattered implant, deposition & knock-in, and sputtering (etching) - are discussed. The TRI3DYN code was used to elucidate the roles these various doping mechanisms play. Through-fin SIMS profiles for an arsenic plasma doping process were calculated from the model and compared to experimental results. Further, by adjusting the competition and balance among these different doping mechanisms, we also demonstrate that the doping profile can be tuned on 3D fin structures for a boron plasma doping process.