Low temperature ohmic contact for p-type GaN using Mg electrodes

摘要

A low temperature Ohmic contact for highly doped pGaN has been demonstrated with Mg electrodes. A of 0.47 eV with of 3.4×10 Ωcm has been extracted by electrical measurements with the TFE model. Considering the WF of the electrodes, the presence of a large potential shift near the interface to reduce the can be suggested. The results give lots of insights on the Ohmic contact for pGaN.