An inductorless noise-cancelling CMOS LNA using wideband linearization technique

摘要

An inductorless noise-cancelling CMOS low-noise amplifier (LNA) with wideband linearization technique is proposed. The complementary configuration by stacked NMOS/PMOS is employed to compensate second-order nonlinearity of the circuit. The third-order distortion of the auxiliary stage is also mitigated by that of the weak inversion transistors in the main path. The bias and scaling size combined by digital control words is further tuned to obtain enhanced linearity over the desired band. Implemented in a 0.18-μm CMOS process, simulated results show that the proposed LNA provides a voltage gain of 16.1 dB and a NF of 2.8~3.4 dB from 0.1 to 1.4 GHz. The IIP3 and IIP2 of 13~18.9 and 24~40 dBm are obtained, respectively. The circuit core consumes 19 mW from a 1.8 V supply.