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Optimization of operational amplifier settling time by adjusting secondary poles based on gm/ID design

机译:通过基于g m / I D 设计调整次级极点来优化运算放大器的建立时间

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In readout circuits of infrared detectors, the settling time of the operational amplifier is crucial to transfer radiation signals. Hence, this paper proposes an optimization of the sizes of the load transistors pair, M3 and M4 in Figure 1, to improve the transient response. In this design, the amplifier is firstly designed based on gm/ID method to satisfy the required performance. However, this may be not the best solution. Then, the sizes of the load transistors are scanned with the fixed width-to-length (W/L) ratio to guarantee the noise level. The step response experiments are carried out to figure out the best damping factor. Meanwhile, this paper analyzes the influence of the doublet spacing and the secondary pole-to-pole spacing. The initial calculated design has a settling time of 39.8ns @ 12 bit precision, while the settling process compresses to 32.4ns after the adjustment.
机译:在红外探测器的读出电路中,运算放大器的建立时间对于传输辐射信号至关重要。因此,本文提出了对图1中的负载晶体管对M3和M4的尺寸进行优化的方法,以改善瞬态响应。在本设计中,首先基于g m / I D 方法设计放大器,以满足所需的性能。但是,这可能不是最佳解决方案。然后,以固定的长宽比(W / L)扫描负载晶体管的尺寸,以确保噪声水平。进行阶跃响应实验以找出最佳阻尼系数。同时,本文分析了双峰间距和次级极间间距的影响。最初计算的设计在12位精度下的建立时间为39.8ns,而调整后的建立过程压缩为32.4ns。

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