To delve about the charge transport properties of p-block elements doped M@B40(M = Al, Si, P, S) molecular device

摘要

Fullerene molecular devices nowadays are becoming the intensive area of research due to their fascinating electronic, optical and structural properties. In this paper we have expounded the current characteristics of all-boron-fullerene B₄₀ molecular device on doping with various elements. The advertent analysis of transport properties of B₄₀ was done by doping third period elements viz aluminium, silicon, phosphorus and sulphur in pure B₄₀. Results showed higher current carrying capability of phosphorus doped fullerene in comparison to pure B₄₀ while aluminium, silicon and sulfur doped fullerene gave lesser value of current. The results bring about the possibility of utilizing doped B₄₀ fullerenes in upcoming molecular electronics applications.