Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches

摘要

Versatile resistance switching effects in niobium oxide based MIM structures have been reported. Besides the filamentary resistance and threshold switching effects, which occur after an initial electroforming process, a forming free resistance switching operation was found in a double layer structure of NbO and AlO. In our work we report on the co-existence of a capacitance change accompanying the analog resistance switching effect. This memcapacitive effect might enable new applications in analog circuits, which go beyond the pure data storage. Results of IV-and CV characterization as well as impedance spectroscopy are presented. Furthermore, a physical model is proposed which describes the underlying mechanisms as interfacial quantum mechanical effect based on charging and discharging of electron trap states.