The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

摘要

The AgGaTe2 layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3 source material into the Ag2Te layer and formation of the AgGaTe2 layer were both occurring during the growth when Ag2Te and Ga2Te3 source mixture was used to form AgGaTe2. It was also clear the AgGaTe2 could be formed by deposition and annealing of Ga2Te3 layer on top of the Ag2Te/Si structure. Solar cells were fabricated using the p-AgGaTe2-Si heterojunction, and showed conversion efficiency of approximately 3%.