Increased transconductance MOSFET device

摘要

MOSFETs are modern devices used for electronic amplifiers. The MOS transconductance or shortly slope is a very important design parameter because it is directly linked with the magnitude of the amplifier voltage gain. Reducing the electronic devices dimensions in actual technologies creates strong advantages such as higher working frequency, but scaling down the structures has some drawbacks regarding the reduced DC gain. This paper presents an original solution for increasing the slope in inversion region, using a new equivalent circuit consisting in suitable interconnected depleted MOSFETS. This equivalent device can be further extended, using more depleted MOSFETs. The threshold voltage, continuously scaled down in actual technology can become a limiting designing parameter. LTspiceIV, as a common simulation environment is used, but the MOSFET models can be continuously enhanced using predictive models, suitable for technology miniaturization and further improvements.