Record-high Modulation-efficiency Depletion-type Si-based Optical Modulator with In-situ B Doped Strained SiGe Layer on Si Waveguide for 1.3 um

摘要

We develop depletion-type Si optical modulator with strained SiGe on lateral Si pn junction. Owing to in-situ B doping for SiGe, we achieve high modulation efficiency of 0.6-0.67 Vcm at 1.3 micrometer wavelength with clear eye opeing at 28 Gbps.