Improvement of chemical vapor deposition graphene for quantum Hall resistance standards

摘要

Quantum Hall (QH) standard devices based on chemical vapor deposition (CVD) graphene have not shown properties as excellent as the one based on epitaxial graphene on SiC. This is because of the impurity, defects and inhomogeneity. In this paper, we demonstrate the progress on improving the quality of CVD graphene by the surface acidic processing and the low oxygen growth procedure.