1/f Noise characteristics of P-channel tin monoxide thin-film transistors

摘要

In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2 × 1021 eV-1cm-3, which is about one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.