Ion Implantation of As, P, B, BF and BF2 on Planar and Alkaline-Textured Si(001) Surfaces for Photovoltaic Applications

摘要

We compare the electrical behavior of different dopant species (As, P, B, BF, BF2) on solar-relevant surfaces (alkaline textured and planar). We find significant differences when substituting B by BF or BF2 as well as when using As instead of P. For the latter equivalent recombination behavior is observed, whereas the sheet resistance is higher when using As. The use of F containing p-type species leads to an increase in sheet resistance and saturation current density.