TRI3DYN Modelling and MEIS Measurements of Arsenic Dopant Profiles in FinFETS

摘要

Implant processes that produced a variety of arsenic dopant profiles in 130nm tall, 110nm pitch FinFET test structures were modelled using the dynamic, binary collision approximation code TRI3DYN and measured using a commercial time of flight medium energy ion scattering (TOF-MEIS) tool. Dopant profiles in the tops and sidewalls of the FinFETS were extracted from MEIS spectra using the 3D capability of the POWERMEIS code. The qualitative agreement between TRI3DYN predictions and MEIS measurements showed the need for POWERMEIS to account for the effects of multiple scattering (which has yet to be implemented) before more quantitative conclusions regarding the absolute accuracy of TRI3DYN can be made. Nevertheless, this work has shown the promise of TRI3DYN and TOF-MEIS as tools to predict and characterise the outcomes of implantation into 3D structures.