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Extension of the Source Lifetime in HC Ion Implanter with Dedicated Species

机译:专用种类的HC离子注入机的源寿命延长

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Ion source life is one of the critical components in the equation that defines productivity, tool availability and overall Cost of Ownership (CoO). In advanced logic devices, the majority of the traditional conductive doping steps such as source drain (SD) and source drain extension (SDE) are now done in-situ during epitaxy. As a result, running mixed species (B/BF2/P/As etc) which inherently helps the source life is becoming less of an option. Operating the source with the same species for an extended time impacts source life. In this paper we present results for a co-gas (Inert + H2) approach [1] in combination with hardware modifications to extend source lifetime for dedicated species operation. Lifetimes of different species have been doubled or even tripled for some species as depicted in the Fig.1. below.
机译:离子源寿命是定义生产率,工具可用性和总体拥有成本(CoO)的方程式中的关键组成部分之一。在高级逻辑器件中,大多数传统的导电掺杂步骤(例如源极漏极(SD)和源极漏极扩展(SDE))现在都在外延期间原位完成。结果,运行固有地有助于源寿命的混合物种(B / BF2 / P / As等)变得越来越少。长时间使用相同种类的光源进行操作会影响光源寿命。在本文中,我们介绍了使用共气(惰性+ H2)方法[1]并结合硬件修改以延长专用物种操作的源寿命的结果。如图1所示,某些物种的不同物种的寿命已翻倍甚至三倍。以下。

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