首页>
外国专利>
High tilt angle plus twist drain extension implant for CHC lifetime improvement
High tilt angle plus twist drain extension implant for CHC lifetime improvement
展开▼
机译:高倾斜角加扭曲排液延伸植入物,可改善CHC寿命
展开▼
页面导航
摘要
著录项
相似文献
摘要
An integrated circuit containing an analog MOS transistor may be formed by implanting drain extensions with exactly four sub-implants wherein at least one sub-implant implants dopants in a substrate of the integrated circuit at a source/drain gate edge of the analog MOS transistor at a twist angle having a magnitude of 5 degrees to 40 degrees with respect to the source/drain gate edge of the analog MOS transistor, for each source/drain gate edge of the analog MOS transistor, wherein a zero twist angle sub-implant is perpendicular to the source/drain gate edge. No more than two sub-implants put the dopants in the substrate at any source/drain gate edge of the analog MOS transistor. All four sub-implants are performed at a same tilt angle. No halo implants are performed on the analog MOS transistor.
展开▼