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Integrated clean for TSV: Comparison between dry process and wet processes and their electrical qualification

机译:TSV的集成清洁:干法工艺和湿法工艺及其电气认证的比较

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In this paper an integrated wet process (photoresist strip and polymer removal) for through silicon vias fabricated by a Bosch process on a 300 mm single wafer tool will be discussed. A comparison between a dry and a wet post etch residue process, the impact of the physical force (induced by megasonics or spray) and the nature of the wet treatment will be given. Finally the cleanliness of the TSVs after either a dry or a wet process will be qualified electrically.
机译:在本文中,将讨论通过Bosch工艺在300 mm单晶圆工具上制造的硅通孔的集成湿法工艺(光刻胶剥离和去除聚合物)。将给出干法和湿法蚀刻后残留工艺,物理力(由超音速或喷雾引起的)的影响以及湿法处理的性质之间的比较。最后,在干法或湿法工艺之后,TSV的清洁度将在电气上合格。

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