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Filter design method for GaN-Buck converter taking into account of the common-mode propagation paths

机译:考虑共模传播路径的GaN-Buck转换器的滤波器设计方法

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Since some years, one solution to increase the power density of the power converters consists to use the wide band gap semiconductors like SiC and GaN. These devices allow having power converters that operating with the high switching frequencies. These fast devices induce of very high variations of the voltage (dv/dt) and current (di/dt) during commutations. The direct consequence is the generation of the very high levels of the electromagnetic interferences (EMI) in a wide frequency band. This study is focus only on the conducted emissions induced by a Buck converter using GaN-transistor and SiC-diode. To reduce these emissions and to comply with EMC standards, one solution consists to use an EMI filter. In order to design the EMI filters by simulations, a modeling method based on an electrical equivalent circuit is proposed. This method allows taking into account of additional common mode impedance that correspond to the ground plane often neglected in the design of the filters. The comparison of the simulation results and measurements of the conducted emissions of the Buck-converter without and with the EMI filter confirm the validity of the proposed approach.
机译:多年来,增加功率转换器的功率密度的一种解决方案包括使用诸如SiC和GaN之类的宽带隙半导体。这些设备允许具有以高开关频率工作的功率转换器。这些快速的设备在换向期间引起电压(dv / dt)和电流(di / dt)的非常大的变化。直接后果是在很宽的频带内产生了很高水平的电磁干扰(EMI)。这项研究仅集中于使用GaN晶体管和SiC二极管的Buck转换器引起的传导发射。为了减少这些排放并符合EMC标准,一种解决方案是使用EMI滤波器。为了通过仿真设计EMI滤波器,提出了一种基于等效电路的建模方法。这种方法可以考虑到额外的共模阻抗,这些阻抗对应于滤波器设计中经常被忽略的接地层。仿真结果的比较和不带EMI滤波器且带EMI滤波器的Buck转换器传导传导的测量结果证实了该方法的有效性。

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