Novel continuously-tunable memristor based on few-layers black phosphorus/MoS2 heterojunction

摘要

Memristor, as the fourth circuit element which is both a non-linear and a memory device, has been receiving extensive attention in the past years. Recently, the memristive phenomena observed on single layer MoS2 has attracted scientists attention to the realization of memristor on novel two-dimensional thin film materials. This article presents a novel two-terminal memory device based thin film two-dimensional materials. The black phosphorus/MoS2 heterojunction based device claims a non-constant resistance that can be continuously tuned by the current flux across the devices.