Electrical simulation and fabrication of high Q spiral inductors on glass substrate using the glass reflow process

摘要

In order to meet the need of high integration and low cost of wireless communication systems, passive devices are widely used in all kinds of systems. This paper introduces an innovative method to manufacture integrated passive inductors based on glass reflow process. IPDs(integrated passive devices) have been simulated by 3D EM(electromagnetic) simulator software HFSS(high frequency structure simulator). From 0GHz to 10GHz, the Q value is above 200, higher than the Q value of conventional thin film inductors. Moreover, several key parameters of spiral inductors including inductor diameter, inductor thickness, substrate thickness, inductor width and inductor space are investigated. Finally, manufacturing process of inductors is presented.