Experimental studies on robustness of super junction VDMOS during the body diode reverse recovery

机译：体二极管反向恢复期间超结VDMOS鲁棒性的实验研究

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Experiments are carried out to investigate the relationship between the robustness of super junction VDMOS (hereafter SJ-VDMOS) and its body diode characteristics. It is found that the voltage overshoot is responsible for the device failure. The mechanism of voltage overshoot has been analyzed thoroughly and some measures to smooth the overshoot are provided. The improved 600V SJ-VDMOS shows a higher ruggedness during its body diode reverse recovery.

机译：进行实验以研究超结VDMOS（以下简称SJ-VDMOS）的鲁棒性与其体二极管特性之间的关系。发现电压过冲是造成设备故障的原因。电压过冲的机理已被彻底分析，并提供了一些使过冲平滑的措施。改进的600V SJ-VDMOS在其体二极管反向恢复期间显示出更高的耐用性。

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《IEEE International Conference on Solid-State and Integrated Circuit Technology》|2016年|1095-1097|共3页
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Min Ren; Yuci Lin; Xiaofeng Cao; Chi Xie; Zehong Li; Bo Zhang;
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Robustness; Junctions; Integrated circuit reliability; Bridge circuits; Voltage measurement;

机译：鲁棒性;结点;集成电路可靠性;桥式电路;电压测量;

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专利

1. Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts [J] . Xu Cheng, Sin J.K.O., Baowei Kang, IEEE Transactions on Electron Devices . 2003,第5期

机译：使用单元分布肖特基触点的高压VDMOSFET中的快速反向恢复体二极管
2. A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss [J] . Kim J., Kim K. Semiconductors . 2020,第5期

机译：具有杂连接二极管的新型4H-SiC超结Umosfet，用于增强反向恢复特性和低开关损耗
3. A Simulation Study of a Novel Superjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery Body Diode [J] . Lin Zhi, Yuan Qi, Hu Shengdong, IEEE Transactions on Electron Devices . 2019,第5期

机译：嵌入超软反向恢复体二极管的新型超结MOSFET的仿真研究
4. Experimental studies on robustness of super junction VDMOS during the body diode reverse recovery [C] . Min Ren, Yuci Lin, Xiaofeng Cao, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：体二极管中超结VDMOS鲁棒性的实验研究反向恢复
5. Experimental study on the effects of nose geometry on drag over axisymmetric bodies in supersonic flow. [D] . Brooker, B. Tyler. 2014

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6. 4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery [O] . Xiaoxue Yan, Lin Liang, Xinyuan Huang, 2021

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7. Study of Reverse Recovery Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes [O] . Syuji Ogata, Daisuke Takayama, Katsunori Asano, 2006

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8. Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation [R] . Joshi, R. P. 2001

机译：高反向偏压作用下含螺型位错的siC结二极管的电热模拟研究

Experimental studies on robustness of super junction VDMOS during the body diode reverse recovery

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