Fabrication of interdigitated microelectrodes for CuO nanowires I-V measurement

摘要

An interdigitated electrode consisted of 50 pairs of 5 μm wide microelectrodes, separated by 5 μm gap has been fabricated using single layer positive photoresist lift-off process. The effect of UV exposure time to electrode width and photoresist overcut angle were optimized for the fabrication of an array interdigitated electrodes. The fabricated interdigitated electrode has been used to measure the electrical properties of thick film and nanowires sample. The CuO film and CuO nanowires have been contacted on the aluminium interdigitated electrode through the joule heating technique. Schottky behaviour based I-V characteristics of both CuO film and CuO nanowires were observed at room temperature. The formation of schottky barrier on the sample has been discussed.