Design and Simulation of 50 nm Vertical Double-Gate MOSFET (VDGM)

摘要

The paper demonstrate the design and simulation study of 2D Vertical Double-Gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50nm, body doping of 3.5 脳 1018 cm-3 and oxide thickness, TOX= 2.5nm, a good drive current ION of 7 驴A/驴m and a low off-state leakage current IOFF of 2 pA/驴m was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM.