Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis

摘要

Miniturization of MOSFET device leads to statistical variation of many process parameters that may cause the degradation of the device performance. Taguchi method has been applied as a tool to optimize the process parameter variation. Since, Taguchi method is only limited to the solution of a single response, it is combined with grey relational analysis (GRA) to solve multi-response optimization. This paper presents a proposed method to optimize halo implant energy, halo implant tilt angle, source/drain (S/D) implant energy and source/drain (S/D) implant tilt angle upon multiple performance characteristics of WSix/TiO2 channel vertical double-gate PMOS device. The normalized experimental results based on L9 Taguchi method are utilized to compute grey relational coefficients and grades. The final results show that the process parameters have been successfully optimized in obtaining a nominal threshold voltage (-0.1783 V), a high drive current (1539.1 μA/μm) and a low leakage current (6.749E-11 A/μm) which meet the International Technology Roadmap Semiconductor (ITRS) 2013 prediction for high performance logic multi-gate technology.