Analysis of light emitters SRO-based to be integrated on all-silicon optoelectronic circuits

摘要

This work presents the analysis of two light emitting capacitors compatible with silicon technology. Both structures use silicon rich oxide obtained by low-pressure chemical vapor deposition as active material. One structure uses a single layer with a textured surface substrate, which improves carrier injection. The second device is a multilayered structured deposited on a polished surface substrate. Both devices are studied and their emission and electrical characteristics are highlighted in order to elucidate on the best option to be integrated in all-silicon optoelectronic circuits.