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Design of A 1.5-V 3-5 GHz CMOS Low-Voltage Transformer-Based Low Noise Amplifier with TR Switch for Computational Intelligence Applications

机译:具有TR开关的1.5V 3-5 GHz CMOS低压基于变压器的低噪声放大器的设计,用于计算智能应用

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An integrated T/R switch designed to protect low-noise amplifier (LNA) circuits in CMOS transceivers is reported. A 1.5-V 3-5 GHz low-noise amplifier utilizing on-chip transformer and gain boosting in cascode stage is fabricated by TSMC 0.18um CMOS process. The transformer-based LNA is realized with a LC ladder filter circuit to achieve the wideband input matching to the source impedance of antenna, whereas the cascode stage with a shunting peaking coil provides a flat and high power gain. The output stage with a diode-connected load matches the measured instrument. This proposed chip also merger T/R-Switch design on single RFIC solution on 3-5 GHz by electronic design automation (EDA) form computational intelligence techniques.
机译:据报道,一个集成的T / R开关旨在保护CMOS收发器中的低噪声放大器(LNA)电路。通过台积电0.18um CMOS工艺制造了一个1.5V 3-5 GHz低噪声放大器,该放大器利用片上变压器和共源共栅级增益提升。基于变压器的LNA通过LC梯形滤波器电路实现,以实现与天线源阻抗的宽带输入匹配,而带有并联峰值线圈的共源共栅级则提供平坦且高功率增益。二极管负载的输出级与被测仪器匹配。该拟议芯片还通过电子设计自动化(EDA)形式的计算智能技术,在3-5 GHz的单个RFIC解决方案上合并了T / R-Switch设计。

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