Back bias modulation of UTBB FDSOI, bulk FinFET, and SOI FinFET

摘要

This study compares the back bias modulation rates of ultra-thin body and buried oxide, fully depleted silicon on insulator (UTBB FDSOI), bulk FinFET, and SOI FinFET Results show that UTBB FDSOI exhibits a two-order higher modulation rate for threshold voltage and considerably higher for transconductance modulation rate than that that of bulk FinFET. The SOI FinFETs generate an insignificant modulation rate possibly because of the thick buried oxide. Brief DC models are proposed to explain the back biasing in these devices.