A compensating technique for RF performance degradation of low noise amplifier in nanoscale CMOS process

摘要

This paper reports a compensating method for RF performance degradation of an ultra-wideband low noise amplifier (LNA) designed in 180 nm CMOS process. A self-compensating circuit for this LNA is presented. RF stress can cause a deterioration of RF performance due to the transconductance degradation. By applying this technique, the loss of transconductance can be detected automatically and can be compensated. The simulation results show that the power gain and noise figure recover for 50% after compensating. This proves the reliability of the method proposed.