A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations

机译：通过2D / 3D仿真，对VF-TLP测试下二极管触发的SCR的瞬态行为有了新的认识

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Transient behaviors of the diode-triggered silicon controlled rectifiers (DTSCRs) under very-fast transmission line pulse (VF-TLP) testing are investigated in this paper. The underlying physics needs to be comprehensively investigated and 2D/3D device simulations are well performed and compared. Analysis uncovers that the turn-on process of intrinsic SCR is ascribed to Darlington effect as well as junction breakdown.

机译：本文研究了二极管触发的可控硅整流器（DTSCR）在非常快的传输线脉冲（VF-TLP）测试下的瞬态行为。需要对底层物理进行全面研究，并且2D / 3D设备仿真必须得到很好的执行和比较。分析发现，本征SCR的导通过程归因于达林顿效应以及结击穿。

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《IEEE International Nanoelectronics Conference》|2016年|1-2|共2页
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Lizhong Zhang; Yuan Wang; Yandong He;
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Thyristors; Junctions; Electrostatic discharges; Testing; Anodes; Performance evaluation;

机译：晶闸管;结;静电放电;测试;阳极;性能评估;

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1. Investigation of layout effects in diode-triggered SCRs under very-fast TLP stress through full-size, calibrated 3D TCAD simulation [J] . Tommaso Cilento, Chan-Su Yun, Arsen Terterian, Microelectronics & Reliability . 2018,第SEPa期

机译：通过全尺寸，经过校准的3D TCAD仿真研究在非常快速的TLP应力下二极管触发的SCR的布局效应
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4. A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations [C] . Lizhong Zhang, Yuan Wang, Yandong He IEEE International Nanoelectronics Conference . 2016

机译：通过2D / 3D模拟在VF-TLP测试下对二极管触发SCRS瞬态行为的新颖洞察
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A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations

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