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Migrating a Converter Design to GaN for Enhanced System Performance

机译:将转换器设计迁移到GaN以增强系统性能

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Adopting GaN can improve system performance in efficiency, thermal capability, and system size. GaN-based system design has been demonstrated across a range of voltage and power levels, in many different topologies, and for a variety of applications. Migrating an existing Si-based design to GaN typically involves optimizing the PCB layout and gate driving circuits, characterization and modeling of power losses, fast overcurrent protection, and consideration of thermal performance. Furthermore, it is important to understand the key parameters and reliability standards for GaN when selecting an appropriate device. This paper reviews the state-of-the-art in commercial GaN transistors, addresses application challenges, then reviews examples of successful design migrations. Examples include hard-switching and soft-switching topologies based on 100 V and 600 V enhancement-mode GaN FETs.
机译:采用GaN可以提高效率,热能和系统尺寸的系统性能。基于GaN的系统设计已经在各种电压和功率水平,许多不同的拓扑中进行了演示,以及各种应用。将现有的基于SI的设计迁移到GAN通常涉及优化PCB布局和栅极驱动电路,表征和损耗的型号,快速电流保护和考虑热性能。此外,在选择适当的设备时,了解GaN的关键参数和可靠性标准非常重要。本文介绍了商业GaN晶体管的最先进,解决了应用挑战,然后评论成功设计迁移的例子。示例包括基于100 V和600 V增强模式GaN FET的硬开关和软切换拓扑。

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