Structure and Optical Properties of Porous Silicon Formed on Silicon Substrates Treated with Compression Plasma Flow

摘要

Porous silicon (PS) layers were formed on silicon substrates treated with compression plasma flow. Lateral size and density of pores formed on the substrates treated with plasma are by 25% larger than that on untreated substrates. Photoluminescence intensity of the PS layers, formed on the plasma treated substrates (PT PS), is twice higher than that of the PS layers, formed on untreated substrates. Three month exposure of normal PS and PT PS layers to the air led to the photoluminescence intensity increase by 3 and 5.7 times, respectively, as well as to the peak position shifting towards long wavelength region by 3.1 ran, in the case of PT PS layer. The photoluminescence intensity increase is attributed to the reduction of the dangling bond density because of passivation by oxygen.