Research of the relations between monolayer SiN_x optical thin film processing techniques and laser-induced damage properties prepared by PECVD technology

摘要

The monolayer SiN_x optical thin films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technology on the BK7 glass substrate, the laser-induced damage threshold was measured by laser damage testing equipment, and we also investigated the relations between processing techniques and laser-induced damage properties. The study and analysis to orthogonal experiment results show that PECVD processing techniques have an effect on the laser-induced damage properties.Among them, radio frequency has the biggest effection, temperature is the main factor, working pressure is the unimportant factor, and we also achieve the optimal processing parameters(Temperature is 350°C;RF power is 250W;Working pressure is 60Pa).