Performance analysis of gate material engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

摘要

We have demonstrated the impact of dual material gate (DMG) and triple material gate (TMG) on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) and a comparison is made with the performance of single material gate (SMG) enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) by using two-dimensional Sentaurus TCAD device simulation. Thermodynamic transport model is used for simulating the proposed device. We have systematically investigated the advantage of DMG and TMG over SMG device. The key idea in this paper is to reveal the enhancement in drain current (Id), transconductance, cut off frequency and RF current gain of DMG and TMG device over SMG normally off n++GaN/InAlN/AlN/GaN high electron mobility transistors. The result shows that the DMG and TMG enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors is potentially better candidate for future high speed, microwave and digital application.