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Effect of high temperature bake on evolution of interfacial structure in Cu wire bonds and its impact on Cu/Al interfacial corrosion

机译:高温烘烤对铜丝键合界面结构演变的影响及其对Cu / Al界面腐蚀的影响

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Although Cu wire bonding has been successful and in high volume production in the industry, sporadic failure of ball bonds on Al pad due to interfacial corrosion has been reported. Different corrosion reactions have been proposed in the literature, but it is still not clear how these reactions could have occurred in the environment of green mold compounds whose contents of free chloride ions were at low ppm levels. In this paper, an experiment was performed to create cracks by bake at 300°C in the interface between Cu ball and Al pad to study the mechanism of interfacial corrosion. It was found that after autoclave test interfacial corrosion occurred only in the units where the Cu/Al interface was cracked. In those units where the Cu/Al interface was not cracked, autoclave test did not result in failure. Evolution of microstructure of inter-metallic compounds and formation of micro voids and cracks in the interface during bake is discussed. The theory of crevice corrosion is applied to explain how the IMC layer and Al pad get corroded in a relatively clean environment. Possible correlation of interfacial corrosion to sustained event of high current density or high voltage in packages is proposed.
机译:尽管在工业上已经成功地进行了铜丝键合并且已经大量生产,但是已经报道了由于界面腐蚀而导致的铝焊盘上的球键合偶发性失效。在文献中已经提出了不同的腐蚀反应,但是仍不清楚在游离氯离子含量处于低ppm水平的生绿色模塑化合物的环境中如何发生这些反应。本文进行了一项实验,通过在300°C的温度下烘烤Cu球和Al垫之间的界面来产生裂纹,以研究界面腐蚀的机理。发现在高压釜测试之后,仅在Cu / Al界面破裂的单元中发生了界面腐蚀。在Cu / Al界面未破裂的那些单元中,高压釜测试不会导致失败。讨论了金属间化合物的微观结构的演变以及烘烤过程中界面中微空隙和裂纹的形成。缝隙腐蚀理论用于解释在相对清洁的环境中如何腐蚀IMC层和Al垫。提出了界面腐蚀与封装中高电流密度或高电压持续事件的可能相关性。

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