Reduction of temperature coefficients in multicrystalline silicon solar cells after light-induced degradation

摘要

This study focuses on the variations of the temperature coefficients after light-induced degradation (LID) of compensated multicrystalline silicon solar cells from three different ingots. The ingots have been chosen to see the effect of the compensation level, the resistivity and the impact of adding gallium to keep the resistivity as constant as possible along the ingot. The temperature coefficients of the efficiency experience a major decrease after LID on all ingots. We found that this decrease varies along the ingot height and does not correspond to the VOC drop. Moreover, no direct correlation with the interstitial oxygen concentration profiles could be seen.