Controlling susceptibilities of quantum dots influenced by electromechanical effects

摘要

This contribution is devoted to the study of optical properties of AlN/GaN quantum dots, focusing on their susceptibility and electromechanical effects affecting such properties. We exemplify main ideas on a model based on the two-band strain-dependent Hamiltonian in cylindrical coordinates. On the first step of our procedure, the resulting strain-dependent two-band Hamiltonian model in effective mass approximation is solved for wurtzite AlN/GaN QDs numerically. Then the wavefunctions for three lowest levels, obtained from our first step, are employed to calculate the dipole moment matrix elements. Finally, the density matrix approach is used for calculation of susceptibility. The feasibility of controlling susceptibility is studied under the influence of electromechanical effects on quantum dot optical properties. Among other things, we demonstrate that electromechanical effects induce blue shifts in the resonance peak of susceptibility in wurtzite quantum dots under the study.