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Accurate power analysis for near-Vt RRAM-based FPGA

机译:基于RRAM的近V t FPGA的精确功率分析

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Resistive Random Access Memory (RRAM)-based FPGA architectures employ RRAMs not only as memories to store the configuration but embed them in the datapaths of programmable routing resources to propagate signals with improved performances. Sources of power consumption have been intensively studied for conventional Static Random Access Memories (SRAM)-based FPGAs. However, very limited works focused so far on studying the power characteristics of RRAM-based FPGAs. In this paper, we first analyze the power characteristics of RRAM-based multiplexer at circuit level and then use electrical simulations to study power consumption of RRAM-based FPGA architectures. Experimental results show that RRAM-based FPGAs achieve a Power-Delay Product reduced by 50% compared to SRAM-based FPGA at nominal voltage and 20% compared to near-V SRAM-based FPGA, respectively.
机译:基于电阻式随机存取存储器(RRAM)的FPGA架构不仅使用RRAM作为存储配置的存储器,而且将它们嵌入可编程路由资源的数据路径中,从而以更高的性能传播信号。对于常规的基于静态随机存取存储器(SRAM)的FPGA,已经对功耗的来源进行了深入研究。但是,到目前为止,只有很少的工作集中在研究基于RRAM的FPGA的功耗特性上。在本文中,我们首先在电路级别分析基于RRAM的多路复用器的功率特性,然后使用电气仿真研究基于RRAM的FPGA架构的功耗。实验结果表明,在标称电压下,基于RRAM的FPGA与基于SRAM的FPGA相比,功耗降低了50%,而与基于V SRAM的FPGA相比,功耗降低了20%。

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