8T-SRAM Cell with Improved Read and Write Margins in 65 nm CMOS Technology

摘要

SRAM operation at subthreshold/weak inversion region provides a significant power reduction for digital circuits. SRAM arrays which contribute to a large amount of power consumption for the processors in sub-100 nm technologies, however, cannot benefit from subthreshold operation. To this end, new SRAM technique on the circuit or architecture level is required. In this chapter, a novel 8T-SRAM cell is proposed which shows a significant improvement in write margin by at least 22 % in comparison to the standard 6T-SRAM cell at supply voltage of 1 V. Furthermore, read static noise margin of the proposed cell is improved by at least 2.2X compared to the standard 6T-SRAM cell. Although by the use of the proposed SRAM cell, the total leakage power is increased for superthreshold region, the proposed cell is able to work at supply voltages lower than 200 mV through which the total power consumption and the robustness of the cell are improved significantly. The proposed circuit is designed in 65 nm CMOS TSMC technology.