A 2.4-GHz fully integrated ESD-protected low-noise amplifier in SMIC 40 nm CMOS technology

摘要

This paper presents and analyzes a fully integrated electrostatic discharge (ESD)-protected low-noise amplifier (LNA) for low-power consumption and narrow band 2.4GHz application using a cascode inductive source degeneration topology. It can achieve power-constrained simultaneous noise and input matching. The circuit is designed and optimized using SMIC 40nm CMOS technology. The post simulation results show that the LNA achieves 14.45 dB power gain at 2.4GHz with a noise figure of 2.16 dB and input return loss of -18 dB for power consumption of 4.9mW.1.