Characterization of effective mobility by split C-V technique in MoS2 MOSFETs with high-k/metal gate

摘要

Effective mobility in top-gated MoS metal-oxide-semiconductor field-effect transistors (MOSFETs) with HfO/TaN gate was investigated. We realized C-V measurements of MoS MOSFETs with a small gate area. The resultant surface carrier concentration dependence of the effective mobility suggested that surface roughness scattering was responsible for the accumulated electron mobility in the fabricated MoS MOSFET. The scanning tunneling microscope image exhibited atomic scale roughness on the cleaved MoS surface. This suggested that the surface roughness should be reduced to improve the performance of MoS MOSFETs.