Effect of asymmetric doping on asymmetric underlap Dual-k spacer FinFET

摘要

This paper extensively analyzes the effect of asymmetric source/drain doping on asymmetric underlap Dual-k spacer Fin-Field Effect Transistor (AsymD-k FinFET). The Proposed unequal doping concentration of source and drain leads to superior short-channel characteristics that alleviate the OFF-current (IOFF) of the device. Recently, high-k spacer materials are attracted much attention because introduction of high-k spacer material enhances the electrostatic control and suppresses the short channel effects in nanoscaled devices. Introducing high-k spacer at source side restricts the source underlapped barrier. Thus, performing asymmetric doping on asymmetric dual-k spacer FinFETs results in significant reduction in IOFF, as a result there is amelioration in ION/IOFF of the device.