Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method

机译：通过快速熔体生长方法在Si衬底上制造渐变的Ge 1-x Sn x 光电探测器

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Near-infrared absorption at 2000-nm wavelength is observed in a GeSn metal-semiconductor-metal (MSM) photodetector on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10%.

机译：在Si基板上的GeSn金属-半导体-金属（MSM）光电探测器中观察到了2000 nm波长的近红外吸收。该设备是通过快速熔体生长方法制造的，其中Sn的梯度浓度高达5-10％。

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《IEEE International Conference on Group IV Photonics》|2015年|125-126|共2页
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Chih-Kuo Tseng; Jia-Jiun Gao; Li-Chuan Weng; Na Neil; Erh-Hao Chen; Lee Ming-Chang M.;
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Graded Ge1−xSnx photodetectors fabricated on Si substrates by rapid melt growth method

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