Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes

摘要

We report the electrical characteristics of carbon nanotube (CNT) vias of diameters down to 30 nm for potential application as on-chip interconnects. A CNT packing or areal density of 1.2×10/cm inside a via has been obtained. The measured resistances of the CNT vias are used to project via resistances in sub-30 nm technology nodes.