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Design of 3-stage high frequency CMOS voltage controlled oscillators

机译:三级高频CMOS压控振荡器的设计

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This paper suggests a three stage voltage controlled oscillator designed using 0.18μm CMOS process with maximum oscillation frequency up to 4.7GHz. Suggested VCO have high tuning range, linear frequency voltage characteristics, low power consumption and have low phase noise. A tail current improvement technique is applied to reduce the discharging time. Oscillation frequency varies from 4.7GHz–0.500GHz when the controlled voltage varies from 1.8V to 0.5V respectively. Prototype was designed in Cadence Virtuoso environment and implemented using gpdk 180nm library with power supply at 1.8V. The measured phase noise for the circuit is −147.1 ldBc/Hz at a 1-MHz offset from a 3.9 GHz centre frequency. Simulated Power consumed by the design is 0.949 mW at 3.38 GHz.
机译:本文提出了一种采用0.18μmCMOS工艺设计的三级压控振荡器,其最大振荡频率高达4.7GHz。建议的VCO具有高调谐范围,线性频率电压特性,低功耗和低相位噪声。应用尾电流改善技术来减少放电时间。当受控电压分别从1.8V变为0.5V时,振荡频率在4.7GHz-0.500GHz范围内变化。原型是在Cadence Virtuoso环境中设计的,并使用带有1.8V电源的gpdk 180nm库实现。在从3.9 GHz中心频率偏移1 MHz的情况下,该电路的实测相位噪声为-147.1 ldBc / Hz。该设计消耗的模拟功率在3.38 GHz时为0.949 mW。

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