首页> 外文会议>International Symposium on Advanced Topics in Electrical Engineering >Investigating resistance of layers in nickel germanide formed on amorphous and crystalline germanium
【24h】

Investigating resistance of layers in nickel germanide formed on amorphous and crystalline germanium

机译:研究非晶态和晶态锗上形成的锗化镍中各层的电阻

获取原文

摘要

Nickel germanide formed on amorphous and crystalline germanium was investigated for sheet resistance, resistivity and specific contact resistivity of Al to the NiGe layers. This paper reports on electrical characterization of NiGe using both c-Ge and a-Ge.
机译:研究了在非晶和结晶锗上形成的锗化镍的薄层电阻,电阻率和Al对NiGe层的比接触电阻率。本文报道了使用c-Ge和a-Ge进行NiGe的电学表征。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号